MJ13333

isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) · Reversed Biased SOA with Inductive Loads ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 175 W Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJ13333 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 6.7A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A ICBO Collector Cutoff Current VCB= 700V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 5A ; VCE= 5V MJ13333 MIN TYP. MAX UNIT 400 V 1.8 V 5.0 V 1.8 V 0.25 ...