MJ16016

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A IBM Base Current-Peak 20 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.7 UNIT ℃/W MJ16016 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VCE(sat)-2 VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 15A; IB= 1.5A IC= 15A; IB= 1.5A,TC=100℃ IC= 15A; IB= 1.5A IC= 15A; IB= 1.5A,TC=100℃ VCBO=850V;IE=0 VCBO=850V;IE=0;TC=100℃ IEBO Emitter Cutoff Current VEB= 6V...