isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain Specified up to 8.0 Amperes
at Temperature ·High SOA: 20 ...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·DC Current Gain Specified up to 8.0 Amperes
at Temperature ·High SOA: 20 A, 18 V, 100 ms ·TO–3PN Package ·Complement to Type MJW21192 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·designed for power audio output, or high power drivers
in audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Pulse
16
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
100
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150
℃
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.65 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
50 ℃/W
MJW21191
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 250V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= ...
