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MJE800

NPN Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A = 100(Min) @ IC= 4A ·Complement to Type MJE700 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed sw...

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