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MJE802 Dataheets PDF



Part Number MJE802
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MJE802 DatasheetMJE802 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor MJE802 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A ·Complement to Type MJE702 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO C.

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isc Silicon NPN Darlington Power Transistor MJE802 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A ·Complement to Type MJE702 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=-40mA VBE(on)-1 Base-Emitter On Voltage IC= 1.5A; VCE= 3V VBE(on)-2 Base-Emitter On Voltage IC= 4A; VCE= -3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 80V; IB= 0 VCB= 80V; IE= 0 VCB= 80V; IE= 0;TC= 100℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1.5A ; VCE= 3V hFE-2 DC Current Gain IC= 4A ; VCE= 3V MJE802 MIN MAX UNIT 80 V 2.5 V 3.0 V 2.5 V 3.0 V 0.1 mA 0.1 0.5 mA 2.0 mA 750 100 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc Website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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