MJE4342

isc Silicon NPN Power Transistors MJE4340/4341/4342/4343 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- MJE4340 = 120V(Min)- MJE4341 = 140V(Min)- MJE4342 = 160V(Min)- MJE4343 ·Low Saturation Voltage ·Complement to the PNP MJE4350/4351/4352/4353 APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE MJE4340 100 VCBO Collector- Base Voltage MJE4341 120 MJE4342 140 MJE4343 160 MJE4340 100 VCEO Collector-Emitter Voltage MJE4341 120 MJE4342 140 MJE4343 160 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 16 ICM Collector Current-Peak 20 IB Base Current-Continuous 5 PC Collector Power Dissipation @ TC=25℃ 125 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJE4340/4341/4342/4343 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT MJE4340 100 VCEO(SUS) Collector-Emitter Sustaining Voltage MJE4341 MJE4342 IC= 50mA ;IB= 0 120 V 140 VCE(sat)-1 VCE(sat)-2 VBE(sat) MJE4343 Collector-Emitter Voltage Collector-Emitter Voltage Saturation IC= 8A; IB= 0.8A Saturation IC= 16A; IB...