MJH13091

isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJH13090 = 450V(Min)—MJH13091 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage MJH13090 650 MJH13091 750 VCEO(SUS) Collector-Emitter Voltage MJH13090 400 MJH13091 450 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current-Continuous 5 IBM Base Current-Peak 10 PC Collector Power Dissipation @TC=25℃ 125 TJ Junction Temperature 150 Tstg Storage Temperature -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJH13090/13091 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJH13090/13091 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage MJH13090 MJH13091 IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A IC= 10A; IB= 2A;TC=100℃ VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1...