DatasheetsPDF.com

MJH16008 Dataheets PDF



Part Number MJH16008
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MJH16008 DatasheetMJH16008 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter V.

  MJH16008   MJH16008



Document
isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 6 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 12 A 125 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJH16008 isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=3mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VCE(sat)-2 VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 5A; IB= 0.5A IC= 5A; IB= 0.5A,TC=100℃ IC= 5A; IB= 0.5A IC= 5A; IB= 0.5A,TC=100℃ VCB=50V;IE=0 TC=100℃ IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 8A ; VCE= 5V MJH16008 MIN TYP. MAX UNIT 450 V 2.5 V 3.0 3.0 V 1.5 1.5 V 0.25 1.5 mA 1.0 mA 7 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc Website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


MJH16006 MJH16008 MJH16018


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)