MJH16018

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Voltage- : VCEO(SUS)= 800V(Min) ·Fast Turn-Off Time ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 8 A IBM Base Current-Peak Collector Power Dissipation PC @TC=25℃ Collector Power Dissipation @TC=100℃ Tj Junction Temperature 12 A 150 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R(th)j-c Thermal Resistance,Junction to Case 1.0 ℃/W MJH16018 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A IC= 5A ;IB= 1A ;TC=100℃ VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 4A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ...