S9013

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent hFE linearity ·Complement to PNP Type S9012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range S9013 VALUE 40 25 5 500 625 150 -55~150 UNIT V V V mA mW ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor S9013 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO V(BR)CEO V(BR)EBO Collector-base breakdown voltage IC= 100μA , IE=0 Collector-Emitter Voltage Breakdown IC= 1mA ; IB= 0 Emitter-base breakdown voltage IE= 100μA , IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 40V ; IE= 0 ICEO Collector cut-off current VCE=20V , IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 50mA ; VCE= 1V hFE-2 DC Current Gain IC= 500mA ; VCE= 1V fT Current-Gain—Bandwidth Product hFE-1 Classifications Rank D E F Range 64-91 78-112 96-135 VCE=6V,IC=20mA,f=30MHz G 112-166 H 144-202 MIN TYP. MAX UNI T 40 V ...