T2141F

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 600(Min.)@ IC= 3A ·Low Collector Saturation Voltage : VCE(sat)= 1.8V(Max.)@ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching for dynamotor excitation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ T2141F isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=6A; IB= 24mA VBE(sat) Base-Emitter Saturation Voltage IC=6A; IB= 24mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 2V T2141F MIN TYP. MAX UNIT 300 V 500 V 5 V 1.8 V 2.0 V 2.5 ...