TIP33C

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@IC = 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type TIP34C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A ICM Collector Current-peak 15 A IB Base Current 3 A PC Collector Power Dissipation@ TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.56 ℃/W TIP33C isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(on)-1 Base-Emitter On Voltage IC= 3A; VCE= 4V VBE(on)-2 Base-Emitter On Voltage IC= 10A; VCE= 4V ICEO Collector Cutoff Current VCE= 100V; IB= 0 ICES Collector Cutoff Current VCE= 100V; VEB= 0 IEBO Emitter Cutoff Current ...