isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining V...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min) ·Complement to Type TIP36C ·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= 1.0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
25
A
ICM
Collector Current-peak
40
A
IB
Base Current
5
A
PC
Collector Power Dissipation@ TC=25℃
125
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.0
UNIT ℃/W
TIP35C
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A ;IB= 1.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A
VBE(on)-1 Base-Emitter On Voltage
IC= 15A ; VCE= 4V
VBE(on)-2 Base-Emitter On Voltage
IC= 25A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
ICES
Collector Cu...