isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80V(Min) ·Complement to Type TIP35B ·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= -1.0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collecto.