isc Silicon PNP Darlington Power Transistor
WT062
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Colle...
isc Silicon
PNP Darlington Power
Transistor
WT062
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-0.5
A
125
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W
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isc & iscsemi is registered trademark
isc Silicon
PNP Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -10A ,IB= -40mA
V BE(on) Base-Emitter On Voltage
IC= -10A ; VCE= -4V
ICBO
Collector Cutoff ...