| DatasheetsPDF.com |
2SB1375 Datasheet, Equivalent, PNP Transistor.PNP Transistor PNP Transistor |
| Part | 2SB1375 |
|---|---|
| Description | PNP Transistor |
| Feature | isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type 2SD2012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1375 APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltag. |
| Manufacture | INCHANGE |
| Datasheet |
| Part | 2SB1375 |
|---|---|
| Description | PNP Transistor |
| Feature | isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type 2SD2012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1375 APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltag. |
| Manufacture | INCHANGE |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |