2SB1383

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver of solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -40 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1383 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1383 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ,IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -12A ,IB= -24mA -1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -12A ,IB= -24mA -2.5 V ICBO Collector Cutoff current VCB= -120V, IE= 0 -10 μA IEBO Emitter Cutoff current VEB= -6V, IC= 0 -10 mA hFE DC Current Gain IC= -12A ; VCE= -4V 2000 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 230 pF f...