2SB1429

isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Complement to Type 2SD2155 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1429 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1429 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -3.0 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -180V ; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -6A ; VCE= -5V 30 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0...