2SB1455

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -4A, IB= -0.4A) ·Complement to Type 2SD2203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1455 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -4A; VCE= -2V fT Current-Gain—Bandwidth Product Switching Times IC= -1A; VCE= -5V ton Turn-on Tim...