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2SB1490 Dataheets PDF



Part Number 2SB1490
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1490 Datasheet2SB1490 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2250 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ·Optimum for 80W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Colle.

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2250 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ·Optimum for 80W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -12 A 90 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1490 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1490 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -6mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 ICEO Collector Cutoff Current VCE= -140V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -6A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= -6A; IB1= -IB2= -6mA, VCC= -50V  hFE-2 Classifications Q P 5000-15000 8000-30000 MIN TYP. MAX UNIT -140 V -2.5 V -3.0 V -100 μA -100 μA -100 μA 2000 5000 30000 20 MHz 1.0 μs 1.5 μs 1.2 μs isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1490 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 3 isc & iscsemi is registered trademark .


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