isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -7A ·Low-Collector ...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications ·Optimum for 110W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-12
A
120 W
3.5
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1503
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon
PNP Darlington Power
Transistor
2SB1503
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -7A; IB= -7mA
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
ICEO
Collector Cutoff Current
VCE= -140V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -7A; VCE= -5V
fT
Current-Gain—Bandwidth Product I...