isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Complement to Type 2SD2400 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Ba...
