2SB1587

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= -6A, VCE=- 4V) ·Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -6A, IB= -6mA) ·Complement to Type 2SD2438 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 75 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1587 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1587 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -6mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -6A; VCE=- 4V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IE= -1A; VCE= -12...