DatasheetsPDF.com

PNP Transistor. 2SB1587 Datasheet

DatasheetsPDF.com

PNP Transistor. 2SB1587 Datasheet






2SB1587 Transistor. Datasheet pdf. Equivalent




2SB1587 Transistor. Datasheet pdf. Equivalent





Part

2SB1587

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor DESCRIPTION ·Collector-Emitter Br eakdown Voltage- : V(BR)CEO= -150V(Min) ·High DC Current Gain- : hFE= 5000( M in.) @(IC= -6A, VCE=- 4V) ·Low Collect or Saturation Voltage- : VCE(sat)= -2.5 V(Max)@ (IC= -6A, IB= -6mA) ·Complemen t to Type 2SD2438 ·Minimum Lot-to-Lot variations for robust device performanc e and reliable operatio.
Manufacture

INCHANGE

Datasheet
Download 2SB1587 Datasheet


INCHANGE 2SB1587

2SB1587; n APPLICATIONS ·Designed for audio, se ries regulator and general purpose appl ications. ABSOLUTE MAXIMUM RATINGS(Ta= 25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V I C Collector Current-Continuous -8 A IB Base Current-Continuous PC Colle ctor Power Dissipatio.


INCHANGE 2SB1587

n @TC=25℃ TJ Junction Temperature - 1 A 75 W 150 ℃ Tstg Storage Te mperature -55~150 ℃ 2SB1587 isc we bsite:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon P NP Darlington Power Transistor 2SB1587 ELECTRICAL CHARACTERISTICS Tj=25℃ u nless otherwise specified SYMBOL PARA METER CONDITIONS V(BR)CEO Collector-E mitter Breakdown Voltage IC=.


INCHANGE 2SB1587

-30mA ; IB= 0 VCE(sat) Collector-Emitt er Saturation Voltage IC= -6A; IB= -6mA VBE(sat) Base-Emitter Saturation Volt age IC= -6A; IB= -6mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEB O Emitter Cutoff Current VEB= -5V; IC = 0 hFE DC Current Gain IC= -6A; VCE =- 4V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz fT Current-Gai n—Bandwidth Produc.

Part

2SB1587

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor DESCRIPTION ·Collector-Emitter Br eakdown Voltage- : V(BR)CEO= -150V(Min) ·High DC Current Gain- : hFE= 5000( M in.) @(IC= -6A, VCE=- 4V) ·Low Collect or Saturation Voltage- : VCE(sat)= -2.5 V(Max)@ (IC= -6A, IB= -6mA) ·Complemen t to Type 2SD2438 ·Minimum Lot-to-Lot variations for robust device performanc e and reliable operatio.
Manufacture

INCHANGE

Datasheet
Download 2SB1587 Datasheet




 2SB1587
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min)
·High DC Current Gain-
: hFE= 5000( Min.) @(IC= -6A, VCE=- 4V)
·Low Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ (IC= -6A, IB= -6mA)
·Complement to Type 2SD2438
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio, series regulator and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
-1
A
75
W
150
Tstg
Storage Temperature
-55~150
2SB1587
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SB1587
isc Silicon PNP Darlington Power Transistor
2SB1587
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -6mA
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -6A; VCE=- 4V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -1A; VCE= -12V
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
MIN TYP. MAX UNIT
-150
V
-2.5 V
-3.0 V
-100 μA
-100 μA
5000
85
pF
65
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







Recommended third-party 2SB1587 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)