2SB1604

isc Silicon PNP Power Transistor DESCRIPTION ·High-speed Switching ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -10A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 2 W 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1604 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1604 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC = –10mA, IB = 0 -20 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -0.33A -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -0.33A -1.5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.1A; VCE= -2V 45 hFE-2 DC Current Gain IC= -3A; VCE...