DatasheetsPDF.com

2SB1607 Dataheets PDF



Part Number 2SB1607
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1607 Datasheet2SB1607 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SB1607 DESCRIPTION ·Large Collector Current ·Satisfactory Linearity of Foward Current Transfer Ratio ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -5A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Complement to Type 2SD2469 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching and general purpose applica.

  2SB1607   2SB1607


Document
isc Silicon PNP Power Transistor 2SB1607 DESCRIPTION ·Large Collector Current ·Satisfactory Linearity of Foward Current Transfer Ratio ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -5A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Complement to Type 2SD2469 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 2 W 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1607 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.25A -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.1A; VCE= -2V 45 hFE-2 DC Current Gain IC= -3A; VCE= -2V 90 260 fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -10V;f=10MHz 30 MHz Switching Times ton Turn-on Time 0.5 μs tstg Storage Time IC= -3A; IB1= -IB2= -0.3A, 1.5 μs tf Fall Time 0.1 μs  hFE-2 Classifications Q P 90-180 130-260 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1607 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 3 isc & iscsemi is registered trademark .


2SB1604 2SB1607 2SB1642


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)