2SB1647

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) ·Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA) ·Complement to Type 2SD2560 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 130 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1647 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -10mA VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -10mA ICBO Collector Cutoff Current VCB= -150V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -10A ; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IE= 2A ; VCE= ...