2SC1162

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current IC= 2.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SA715 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A 10 W 0.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1162 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1162 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1.5A ; VCE= 2V ICBO Collector Cutoff Current VCB= 35V; IE= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V hFE-2 DC Current Gain IC= 1.5A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE...