2SC1212A

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current -IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 8 W 0.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1212A isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1212A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 50mA ; VCE= 4V ICBO Collector Cutoff Current VCB= 50V; IE= 0 hFE-1 DC Current Gain IC= 50mA ; VCE= 4V hFE-2 DC Current Gain IC= 1A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 30mA ; VCE= 4V MIN TYP. MAX UNIT 80 V 80 V 4 V 1.5 V 1.0 V 5 μA 60 200 20 160 MHz  hFE-1 ...