isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Low Collector...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 50mA ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in line-operated color TV chroma output Circuits and sound output circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
200
mA
15
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC1505
isc website:www.iscsemi.cn
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isc Silicon
NPN Power
Transistor
2SC1505
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB=5mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 200V ; IE= 0
100 nA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
100 nA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
40
200
fT
Current-Gain—Bandwidth Product
IC= 10mA; VCE= 30V;ftest= 1.0MHz
80
MHz
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC produ...