2SC1567

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SA794 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency high power driver. ·Optimum for the driver stage of low-frequency and 40W to 100W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 1.2 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SC1567 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1567 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 1μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA hFE-1 DC Current Gain IC= 150mA; VCE= 10V hFE-2 DC Current Gain IC= 500mA; VCE= 5V fT Current-Gain—Bandwidth Product IE= -50mA ; VCB= 10V COB Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz MIN TYP. MAX UNIT 100 V 5 V 0.4 V 1.2 V 90 330 50 120 MH...