2SC2168

isc Silicon NPN Power Transistor 2SC2168 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2168 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A 1.0 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 0.7A; VCE= 10V 60 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 35 pF fT Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V 15 MHz Switching Times ton Turn-On Time tstg Storage Time IC= 1A; IB1= -IB2= 0.1A; VCC= 20V; RL= 20Ω 1.0 μs 3.0 μs t...