2SC2245

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak 450 V 400 V 5 V 10 A 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W 2SC2245 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2245 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V hFE DC Current Gain ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= 4A; VCE= 5V VCB= 450V; IE= 0 TC=125℃ VCE= 400V; IB= 0 10 1.0 4.0 mA 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA Switching Times tr ...