2SC2258

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high breakdown voltage general amplification ·For video output amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.15 A 4 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2258 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2258 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Vltage IE= 0.1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB=5mA 1.2 V VBE(on) Collector-Emitter On Voltage IC= 40mA ; VCE= 20V 1.2 V ICER Collector Cutoff Current VCE= 250V; RBE= 100kΩ 100 μA hFE-1 DC Current Gain IC= 40mA ; VCE= 20V 40 hFE-2 DC Current Gain IC= 5mA ; VCE= 50V 30 fT Current-Gain—Bandwidth Product IE= -10mA;VCB= 10V;ftest= 200MHz 100 MHz COB Output Capacitance IE= 0; VCB= 50V,ftest= 1MHz 3 pF Notice： IS...