2SC2270

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Power Dissipation PC=10W(Tc=25℃), PC=1.0W(Ta=25℃) ·High DC Current Gain : hFE=140~450@VCE=2V,IC=0.5A hFE=70(Min)@VCE=2V,IC=4A ·Low Collector Saturation Voltage VCE(sat)=1.0V(Max)@IC=4A,IB=0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for strobo flash and medimum power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 20 VCES Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage 8 IC Collector Current-Continuous 5 ICM Collector Current-Peak 8 IE Emitter Current-Continuous -5 IEM Emitter Current-Peak -8 Collector Power Dissipation @ TC=25℃ 10 PC Collector Power Dissipation @ Ta=25℃ 1.0 UNIT V V V V A A A A W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2270 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2270 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 2V ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE-1 ...