2SC2275

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA985 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2275 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cutoff Current VCB= 120V ; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 5mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.3A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V  hFE Classifications R Q P 60-120 100-200 160-320 2SC2275 MIN TYP. MAX UNIT...