2SC2307

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2307 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 7A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -1A; VCE= 12V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 7A ,RL= 14Ω, IB1= -IB2= 1.4A, VCC= 100V 2SC2307 MIN TYP. MAX UNIT 400 V 0.5 V 1.3 V 100 μA 100 μA 10 18 MHz 0.7 μs 2.5 μs 0.7 μs Notice： ISC reserves ...