isc Silicon NPN Power Transistor
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
: V(BR)C...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1006 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
180
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
3.0
A
Collector Power Dissipation@ Ta=25℃
1.5
PC
W
Collector Power Dissipation@TC=25℃
25
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2336
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)★ Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat)★ Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3.0V; IC=0
hFE-1★
DC Current Cain
IC= 5mA ; VCE= 5V
hFE-2★
DC Current Cain
IC= 150mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 100mA ; VCE= 10V
COB
Output Capacitance
★Pulse Test/PW≦350us,duty≦2%
hFE-2 Classifications
R
Q
P
60-120 100-200 160-320
IE= 0 ; VCB= 10V;ftest= 1....
