2SC2344

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.3V(Typ.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Complement to Type 2SA1011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A PC Total Power Dissipation@ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2344 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2344 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 160 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 180 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.5 V VBE(on) Base-Emitter On Voltage IC= 10mA; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 μA hFE DC Current Gain IC= 0.3A; VC...