isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min) ·High Switchi...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power switching ·Power amplification ·Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
8
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2365
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 1.25A
hFE
DC Current Gain
IC= 3A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
2SC2365
MIN TYP. MAX UNIT
500
V
6
V
3.0
V
1.6
V
12
0.1 mA
0.1 mA
10
MHz
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