2SC2371

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for video applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2371 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2371 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA 1.5 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.1 μA hFE DC Current Cain IC= 10mA; VCE= 10V 40 250 fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 10V 50 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 3.0 pF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. I...