2SC2429

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters and inverters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC2429 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2429 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; RBE= ∞ 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A 2.0 V hFE※ DC Current Gain IC= 10A; VCE= 5V 10 40 ICBO Collector Cutoff Current VCB= 450V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA fT Current-Gain—Bandwidth Product IC= 2A; VCE= 10V; f= 10MHz 35 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz ...