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NPN Transistor. 2SC2486 Datasheet

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NPN Transistor. 2SC2486 Datasheet






2SC2486 Transistor. Datasheet pdf. Equivalent






2SC2486 Transistor. Datasheet pdf. Equivalent


2SC2486

Part

2SC2486

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 120V(Min) ·High Powe r Dissipation ·Complement to Type 2SA1 062 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier ap plications ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETE.
Manufacture

INCHANGE

Datasheet
Download 2SC2486 Datasheet


INCHANGE 2SC2486

2SC2486; R VALUE UNIT VCBO Collector-Base Vol tage 120 V VCEO Collector-Emitter V oltage 120 V VEBO Emitter-Base Volt age 5 V IC Collector Current-Contin uous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Tempera ture Range -55~150 ℃ 2SC2486 isc website:www.iscsemi.com .


INCHANGE 2SC2486

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC 2486 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collect or-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Satur ation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector .

Part

2SC2486

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 120V(Min) ·High Powe r Dissipation ·Complement to Type 2SA1 062 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier ap plications ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETE.
Manufacture

INCHANGE

Datasheet
Download 2SC2486 Datasheet




 2SC2486
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High Power Dissipation
·Complement to Type 2SA1062
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
12
A
80
W
150
Tstg
Storage Temperature Range
-55~150
2SC2486
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC2486
isc Silicon NPN Power Transistor
2SC2486
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
hFE-3
DC Current Gain
IC= 5A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
120
V
2.0
V
1.8
V
50 μA
50 μA
20
40
200
20
20
MHz
hFE-2 Classifications
R
Q
P
40-80 60-120 100-200
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



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