isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.) ·Good Lineari...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1064 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
12
A
100
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SC2488
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
2SC2488
MIN TYP. MAX UNIT
150
V
2.0
V
2.5
V
1
mA
2
mA
40
280
20
50
MHz
hFE-2 Classifications
R
Q
P
O
40-80 60-120 90-180 140-280
Notice：
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