2SC2562

isc Silicon NPN Power Transistor 2SC2562 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= 0.4(V)(Max)@IC= 3A ·High Switching Speed ·Complement to Type 2SA1012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2562 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.15A ICBO Collector Cutoff Current VCB= 50V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 1V hFE-2 DC Current Gain IC= 3A ; VCE= 1V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A ,RL= 10Ω, IB1= -IB2= 0.15A,VCC= 30V MIN TYP. M...