2SC2564

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1094 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2564 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5 A VBE Base-Emitter Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V  hFE-1 Classifications R O Y 55-110 80-160 120-240 2SC2564 MIN TYP....