2SC2594

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2594 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-2 DC Current Gain IC= 1A; VCE= 2V fT Current-Gain—Bandwidth Product IE= -50mA; VCB= 6V COB Output Capacitance IE= 0; VCB= 20V, ftest= 1MHz 2SC2594 MIN TYP. MAX UNIT 20 V 7 V 1.0 V 0.1 μA 0.1 μA 140 450 70 150 MHz 50 pF Notice： ISC reserves the r...