isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Good Lin...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high frequency high voltage amplifier
and TV viedo output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
0.1
A
1.25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2611
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA
ICEO
Collector Cutoff Current
VCE= 250V; RBE= ∞
hFE
DC Current Gain
IC= 20mA ; VCE= 20V
fT
Current-Gain—Bandwidth Product
IC= 20mA ; VCE= 20V
COB
Output Capacitance
IE= 0; VCB= 20V,ftest= 1MHz
2SC2611
MIN TYP. MAX UNIT
300
V
300
V
5
V
1.5
V
1
μA
30
200
80
MHz
4
pF
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