isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·Good L...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed and high power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2.5
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2613
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
2SC2613
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0
400
V
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.5
V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
100 μA
ICEO
Collector Cutoff Current
VCE= 350V; IB= 0
100 μA
hFE-1
DC Current Gain
IC= 2.5A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
7
Switching Times
ton
Tu...