isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min) ·High ...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed and high power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2616
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
hFE-2
DC Current Gain
IC= 10A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
ICEO
Collector Cutoff Current
VCE= 350V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 10A; IB1= -IB2= 2A, VCC≈ 150V
2SC2616
MIN TYP. MAX UNIT
400
V
1.2
V
1.7
V
1...