2SC2654

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current- Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2654 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2654 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.6 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.1A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 3A ; VC...